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BAS21VD

NXP Semiconductors
Part Number BAS21VD
Manufacturer NXP Semiconductors
Description High-voltage switching diode array
Published Jun 11, 2010
Detailed Description SOT457 BAS21VD High-voltage switching diodes 1 August 2013 Product data sheet 1. General description Triple high-volt...
Datasheet PDF File BAS21VD PDF File

BAS21VD
BAS21VD

Overview
SOT457 BAS21VD High-voltage switching diodes 1 August 2013 Product data sheet 1.
General description Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits • High switching speed: trr ≤ 50 ns • Low capacitance: Cd ≤ 5 pF • Reverse voltage: VR ≤ 200 V • AEC-Q101 qualified • Repetitive peak reverse voltage: VRRM ≤ 250 V • Repetitive peak forward current: IFRM ≤ 1 A • Small SMD plastic package 3.
Applications • High-voltage switching in surface-mounted circuits • Automotive • Communication 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Per diode IF forward current pulsed; tp ≤ 300 µs; δ ≤ 0.
02 [1] VR reverse voltage Per diode IR reverse current VR = 200 V; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.
02 trr reverse recovery time IF = 30 mA; IR = 30 mA; IR(meas) = 3 mA; RL = 100 Ω; Tamb = 25 °C Min Typ Max Unit - - 200 mA - - 200 V - 25 10...


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