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BAS21

Diotec Semiconductor
Part Number BAS21
Manufacturer Diotec Semiconductor
Description Surface Mount Silicon Planar Small-Signal Diode
Published Mar 26, 2005
Detailed Description BAS19 ... BAS21 BAS19 ... BAS21 Fast Switching Surface Mount Si-Planar Diodes Schnelle Si-Planar-Dioden für die Oberfl...
Datasheet PDF File BAS21 PDF File

BAS21
BAS21

Overview
BAS19 .
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BAS21 BAS19 .
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BAS21 Fast Switching Surface Mount Si-Planar Diodes Schnelle Si-Planar-Dioden für die Oberflächenmontage Version 2015-05-12 Power dissipation – Verlustleistung 2.
9 ±0.
1 0.
4+0.
1 -0.
05 3 Type Code 1 1.
9±0.
1 2 1.
1+0.
1 -0.
2 2.
4 ±0.
2 1.
3±0.
1 Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx.
– Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions - Maße [mm] 1 = A 2 = n.
c.
/frei 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 250 mW 120.
.
.
250 V SOT-23 (TO-236) 0.
01 g Maximum ratings (TA = 25°C) Type Typ BAS19 BAS20 BAS21 Continuous reverse voltage Dauersperrspannung VR [V] 100 150 200 Grenzwerte (TA = 25°C) Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) 120 200 250 Power dissipation − Verlustleistung Max.
average forward current (dc) Dauergrenzstrom Repetitive peak forward current Periodischer Spitzenstrom Non repetitive peak forward surge current Stoßstrom-Grenzwert Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur tp ≤ 1 s tp ≤ 1 µs Ptot IFAV IFRM IFSM IFSM Tj TS 250 mW 2) 200 mA 1) 625 mA 1) 0.
5 A 2.
5 A - 55.
.
.
+150°C - 55…+150°C Characteristics (Tj = 25°C) Forward voltage Durchlass-Spannung Leakage current Sperrstrom Tj = 25°C Tj = 150°C IF = 100 mA IF = 200 mA V = VR V = VR Kennwerte (Tj = 25°C) VF < 1.
00 V VF < 1.
25 V IR < 100 nA IR < 100 µA 1 Tested with 100 µA pulses – Gemessen mit 100 µA-Impulsen 2 Mounted on P.
C.
board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss © Diotec Semiconductor AG http://www.
diotec.
com/ 1 Characteristics (Tj = 25°C) Max.
junction capacitance – Max.
Sperrschichtkapazität VR = 0 V, f = 1 MHz Reverse recovery time – Sperrverzug IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA Thermal resistance junction ...


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