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BAS21

CYStech Electronics
Part Number BAS21
Manufacturer CYStech Electronics
Description High voltage switching (double) diodes
Published May 21, 2014
Detailed Description CYStech Electronics Corp. High voltage switching (double) diodes Spec. No. : C335N3 Issued Date : 2009.04.07 Revised Da...
Datasheet PDF File BAS21 PDF File

BAS21
BAS21

Overview
CYStech Electronics Corp.
High voltage switching (double) diodes Spec.
No.
: C335N3 Issued Date : 2009.
04.
07 Revised Date : 2014.
02.
24 Page No.
: 1/7 BAS21/A/C/SN3 Description High voltage switching diodes encapsulated in a SOT-23 small plastic SMD package.
Single diodes and double diodes with different pinning are available.
Features •Fast switching speed •Low forward voltage drop •Pb-free lead plating and halogen-free package Mechanical Data •Case : SOT-23, molded plastic •Terminals : Solderable per MIL-STD-202 Method 208 •Weight : 0.
008 grams(approx.
) Pinning Pin 1 2 3 BAS21 A NC K Outline Description BAS21A K1 K2 A1,A2 BAS21C A1 A2 K1,K2 BAS21S A1 K2 K1,A1 SOT-23 3 1 2 (1) BAS21 (2)BAS21A Marking: Type BAS21N3 BAS21AN3 BAS21CN3 BAS21SN3 Marking Code JS JS2 JS3 JS4 (3)BAS21C (4)BAS21S Diode configuration and symbol BAS21/A/C/SN3 CYStek Product Specification http://www.
Datasheet4U.
com CYStech Electronics Corp.
Absolute Maximum Ratings(Ta=25℃, unless otherwise specified) Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-repetitive Peak Forward Surge Current Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Symbol VRRM VRWM VR IFM IO @ tp=1μs @ tp=100μs @ tp=1s IFSM IFRM PD RθJA TJ TSTG Spec.
No.
: C335N3 Issued Date : 2009.
04.
07 Revised Date : 2014.
02.
24 Page No.
: 2/7 Limits 250 400 200 9 3 1.
7 625 250 500 -65~+150 -65~+150 unit V mA mA A mA mW °C/W °C °C Characteristics (Ta=25°C) Characteristic Reverse Breakdown Voltage Forward Voltage (Note) Symbol VBR VF IR CD trr Condition IR=100μA IF=100mA IF=200mA VR=200V VR=200V, Tj=150°C VR=0V, f=1MHz IF=IR=30mA RL=100Ω measured at IR=3mA Min.
250 - Max.
1 1.
25 100 100 5 50 Unit V V V nA μA pF ns Reverse Leakage Current Diode Capacitance Reverse Recovery Time Note: Pulse test, tp=300μs...


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