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BT1308W

NXP Semiconductors
Part Number BT1308W
Manufacturer NXP Semiconductors
Description Triacs logic level
Published Jun 18, 2010
Detailed Description BT1308W series D Triacs logic level Rev. 01 — 27 February 2008 www.DataSheet4U.com Product data sheet 1. Product profi...
Datasheet PDF File BT1308W PDF File

BT1308W
BT1308W

Overview
BT1308W series D Triacs logic level Rev.
01 — 27 February 2008 www.
DataSheet4U.
com Product data sheet 1.
Product profile 1.
1 General description Passivated sensitive gate triacs in a SOT223 surface-mountable plastic package 1.
2 Features I Sensitive gate I Direct interfacing to logic level ICs I Gate triggering in four quadrants I Direct interfacing to low-power gate drive circuits 1.
3 Applications I General purpose switching and phase control I Low-power AC fan speed controllers 1.
4 Quick reference data I VDRM ≤ 400 V (BT1308W-400D) I VDRM ≤ 600 V (BT1308W-600D) I ITSM ≤ 9 A (t = 20 ms) I IGT ≤ 5 mA I IGT ≤ 7 mA (T2− G+) I IT(RMS) ≤ 0.
8 A 2.
Pinning information Table 1.
Pin 1 2 3 4 Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) mounting base; main terminal 2 (T2) 1 2 3 4 T2 sym051 Simplified outline Graphic symbol T1 G SOT223 NXP Semiconductors BT1308W series D Triacs logic level www.
DataSheet4U.
com 3.
Ordering information Table 2.
Ordering information Package Name BT1308W-400D BT1308W-600D SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 Type number 4.
Limiting values Table 3.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDRM IT(RMS) ITSM Parameter repetitive peak off-state voltage RMS on-state current Conditions BT1308W-400D BT1308W-600D full sine wave; Tsp ≤ 107.
4 °C; see Figure 4 and 5 Min Max 400 600 0.
8 Unit V V A non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.
7 ms over any 20 ms period −40 9 10 0.
32 50 50 50 10 1 5 0.
1 +150 125 A A A2s A/µs A/µs A/µs A/µs A W W °C °C I2t dIT/dt I2t for fusing rate of rise of on-state current tp = 10 ms ITM = 1 A; IG = 20 mA; dIG/dt = 0.
2 A/µs T2+ G+ T2+ G− T2− G− T2− G+ IGM PGM PG(AV) Tstg Tj peak gate current peak gate power average gate power storage temperature junction temperature BT1308W_SER_D_1 © NXP B.
V.
2008.
All ...


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