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MRF6V3090NR1

Part Number	MRF6V3090NR1
Manufacturer	Motorola Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 1, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field E...
Datasheet	MRF6V3090NR1 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.
DataSheet4U.
com Rev.
0, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.
Devices are suitable for use in broadcast applications.
• Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 350 mA, Pout = 18 Watts Avg.
, f = 860 MHz, 8K Mode, 64 QAM, Input Signal PAR = 9.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 22.
0 dB Drain Efficiency — 28.
5% ACPR @ 4 MHz Offset — --62.
0 dBc @ 4 kHz Bandwidth • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Input Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Excellent Thermal Stability • Greater Negative Gate--Source Voltage Range for Improved Class...

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