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2SK4017

Toshiba Semiconductor
Part Number 2SK4017
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2010
Detailed Description www.DataSheet4U.com 2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper R...
Datasheet PDF File 2SK4017 PDF File

2SK4017
2SK4017

Overview
www.
DataSheet4U.
com 2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Applications 6.
5 ± 0.
2 5.
2 ± 0.
2 1.
5 ± 0.
2 Unit: mm 0.
6 MAX.
z 4-V gate drive z Low drain−source ON-resistance: RDS (ON) = 0.
07 Ω (typ.
) z High forward transfer admittance: |Yfs| = 6.
0 S (typ.
) z Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) 1.
6 0.
9 4.
1 ± 0.
2 5.
5 ± 0.
2 1.
1 ± 0.
2 0.
6 MAX.
Absolute Maximum Ratings (Ta = 25°C) 2.
3 2.
3 Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 5 20 20 40.
5 5 2 150 −55 to 150 Unit 1 2 3 V V V A A W mJ A mJ °C °C 1.
2.
0.
8 MAX.
1.
1 MAX.
0.
6 ± 0.
15 0.
6 ± 0.
15 2.
3 ± 0.
2 5.
7 2 1 3 Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanch...


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