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C5354

Part Number	C5354
Manufacturer	Toshiba Semiconductor
Description	2SC5354
Published	Sep 15, 2010
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching...
Datasheet	C5354 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5354 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications 2SC5354 Unit: mm • Excellent switching times: tr = 0.
7 μs (max) tf = 0.
5 μs (max) (IC = 2 A) • High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 900 V 800 V 7 V 5 A 8 2 A 100 W 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.
7 g (typ.
) Note 1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the o...

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