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BGA2866

NXP
Part Number BGA2866
Manufacturer NXP
Description MMIC Wideband Amplifier
Published Oct 23, 2010
Detailed Description BGA2866 MMIC wideband amplifier Rev. 4 — 13 July 2015 Product data sheet 1. Product profile 1.1 General description S...
Datasheet PDF File BGA2866 PDF File

BGA2866
BGA2866

Overview
BGA2866 MMIC wideband amplifier Rev.
4 — 13 July 2015 Product data sheet 1.
Product profile 1.
1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.
1.
2 Features and benefits  Input internally matched to 50   A gain of 23.
2 dB at 250 MHz increasing to 24.
3 dB at 2150 MHz  Output power at 1 dB gain compression = 4 dBm  Supply current = 17.
4 mA at a supply voltage of 5 V  Reverse isolation > 32 dB up to 2150 MHz  Good linearity with low second order and third order products  Noise figure = 3.
8 dB at 950 MHz  Unconditionally stable (K > 1)  No output inductor required 1.
3 Applications  LNB IF amplifiers  General purpose low noise wideband amplifier for frequencies between DC and 2.
2 GHz 2.
Pinning information Table 1.
Pin 1 2, 5 3 4 6 Pinning Description VCC GND2 RF_OUT GND1 RF_IN Simplified outline Graphic symbol 654 1 63 123 4 2, 5 sym052 NXP Semiconductors BGA2866 MMIC wideband amplifier 3.
Ordering information Table 2.
Ordering information Type number Package Name Description BGA2866 - plastic surface-mounted package; 6 leads Version SOT363 4.
Marking Table 3.
Marking Type number BGA2866 Marking code *ED Description * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VCC ICC Ptot Tstg Tj Pdrive supply voltage supply current total power dissipation storage temperature junction temperature drive power RF input AC coupled Tsp = 90 C 6.
Thermal characteristics Min Max Unit 0.
5 +7.
0 V - 36 mA - 200 mW 40 +125 C - 125 C - +10 dBm Table 5.
Symbol Rth(j-sp) Thermal characteristics Parameter Conditions thermal resistance from junction to Ptot = 200 mW; Tsp = 90 C solder point Typ Unit 300 K/W 7.
Characteristics Table 6.
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