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WFP12N60

WINSEMI SEMICONDUCTOR
Part Number WFP12N60
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description www.DataSheet.in P12N60 WF WFP Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gat...
Datasheet PDF File WFP12N60 PDF File

WFP12N60
WFP12N60

Overview
www.
DataSheet.
in P12N60 WF WFP Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.
65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symb...


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