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WFP12N65

WINSEMI SEMICONDUCTOR
Part Number WFP12N65
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description www.DataSheet.in P12N6 5 WF WFP N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low G...
Datasheet PDF File WFP12N65 PDF File

WFP12N65
WFP12N65

Overview
www.
DataSheet.
in P12N6 5 WF WFP N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.
8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.
7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for AC-DCswitching power supplies, DC-DCpower converters, high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature (Note 2) (Note 1) (Note 3) (Note1) ...


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