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SFH3010

OSRAM
Part Number SFH3010
Manufacturer OSRAM
Description Silicon NPN Phototransistor
Published Nov 28, 2010
Detailed Description Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 SFH 3010   SFH 3010 SMARTLED® Silicon NPN Phototransistor (not for new de...
Datasheet PDF File SFH3010 PDF File

SFH3010
SFH3010

Overview
Prowdwuwk.
todsartaemn-bolast.
tco|mVersion 1.
1 SFH 3010   SFH 3010 SMARTLED® Silicon NPN Phototransistor (not for new design in automotive applications) Applications ——Access Control (IRIS/Vein Scan, Face Recognition) ——Electronic Equipment ——Health Monitoring (Heart Rate Monitoring, Pulse Oximetry) Features: ——Package: Epoxy, diffuse ——ESD: 2 kV acc.
to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Very small package: (LxWxH) 1.
7 mm x 0.
8 mm x 0.
65 mm ——Large viewing angle ± 80° ——Available on tape and reel ——Spectral range of sensitivity: (typ) 420 .
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1100 nm Ordering Information  Type Photocurrent  VCE = 5 V; λ = 950 nm; Ee = 0.
5 mW/cm² IPCE SFH 3010-Z ≥ 25 µA Ordering Code Q65110A6458 Not for new design in automotive applications 1 Version 1.
3 | 2019-07-16 SFH 3010   Maximum Ratings TA = 25 °C Parameter Operating temperature Storage temperature Collector-emitter voltage Collector-emitter voltage pulse t ≤ 10 µs; TA = 25 °C Collector current Collector surge current τ ≤ 10 µs Emitter-collector voltage Total power dissipation ESD withstand voltage acc.
to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) Symbol Top Tstg VCE VCE pulse IC ICS VEC Ptot VESD min.
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Values -40 °C 100 °C -40 °C 100 °C 15 V 30 V 15 mA 75 mA 7V 130 mW 2 kV  Not for new design in automotive applications 2 Version 1.
3 | 2019-07-16 SFH 3010   Characteristics TA = 25 °C Parameter Wavelength of max sensitivity Spectral range of sensitivity Dimensions of chip area Radiant sensitive area Half angle Dark current VCE = 20 V; E = 0 Rise time IC = 1 mA; VCC = 5 V; RL = 1 kΩ Fall time IC = 1 mA; VCC = 5 V; RL = 1 kΩ Collector-emitter saturation voltage 1) IC = 10 µA, Ee = 0.
5 mW / cm², λ = 950 nm Capacitance VCE = 0 V; f = 1 MHz; E = 0 Thermal resistance junction ambient real Thermal resistance junction solder point real  Symbol λS max λ10% LxW A φ ICE0 tr tf VCEsat CCE RthJA RthJS typ.
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