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2SA0879

Part Number	2SA0879
Manufacturer	Panasonic Semiconductor
Description	Silicon PNP Transistor
Published	Dec 24, 2010
Detailed Description	Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Fea...
Datasheet	2SA0879 PDF File

Overview

Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features • High collector-emitter voltage (Base open) VCEO 0.
7+0.
3 –0.
2 0.
7±0.
1 Unit: mm 5.
9±0.
2 4.
9±0.
2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −250 −200 −5 −70 −100 1 150 −55 to +150 Unit V V V mA mA W °C °C 1 2 3 0.
45+0.
2 –0.
1 (1.
27) 13.
5±0.
5 0.
45+0.
2 –0.
1 (1.
27) 8.
6±0.
2 2.
54±0.
15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCEO VEBO hFE VCE(sat) fT Cob Conditions IC = −100 µA, IB = 0 IE = −1 µA, IC = 0 VCE = −10 V, IC = −5 mA IC = −50 mA, IB = −5 mA VCB = −10 V, IE = 10 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 50 80 5 10 Min −200 −5 60 220 −1.
5 Typ Max Unit V V  V MHz pF Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE Q 60 to 150 R 100 to 220 Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002 SJC00006BED (3.
2) 1 www.
DataSheet.
in 2SA0879 PC  Ta 1.
2 −120 IC  VCE Ta = 25°C IB = −2 mA −1.
8 mA −1.
6 mA −1.
4 mA −1.
2 mA −1.
0 mA − 0.
8 mA − 0.
6 mA − 0.
4 mA −120 IC  I B VCE = −10 V Ta = 25°C Collector power dissipation PC (W) 1.
0 −100 −100 Collector current IC (mA) Collector current IC (mA) 0.
8 −80 −80 0.
6 −60 −60 0.
4 −40 −40 0.
2 −20 − 0.
2 mA −20 0 0 20 40 60 80 100 120 140...

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