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2SA0885

Panasonic Semiconductor
Part Number 2SA0885
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Co...
Datasheet PDF File 2SA0885 PDF File

2SA0885
2SA0885

Overview
Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 ■ Features • Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation to the heat sink 8.
0+0.
5 –0.
1 φ 3.
16±0.
1 3.
8±0.
3 11.
0±0.
5 3.
2±0.
2 1.
9±0.
1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −45 −35 −5 −1 −1.
5 1.
2 5.
0 * 0.
75±0.
1 Unit 4.
6±0.
2 0.
5±0.
1 0.
5±0.
1 2.
3±0.
2 3 1.
76±0.
1 V V V A A W °C °C 1 2 150 −55 to +150 Note) *: With a 100 × 100 × 2 mm Al heat sink ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCBO VCEO ICBO ICEO IEBO hFE1 * Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCB = −20 V, IE = 0 VCE = −20 V, IB = 0 VEB = −5 V, IC = 0 VCE = −10 V, IC = −500 mA VCE = −5 V, IC = −1 A IC = −500 mA, IB = −50 mA VCE = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz Min −45 −35 Typ 16.
0±1.
0 1: Emitter 2: Collector 3: Base TO-126B-A1 Package Max − 0.
1 −100 −10 85 50 − 0.
5 200 20 30 340 hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob MHz pF Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 Note) The part number in the parenthesis shows conventional part number.
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