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NTD5865N

ON Semiconductor
Part Number NTD5865N
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Feb 16, 2011
Detailed Description NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features • Low Gate Charge • Fast Switching • High Current Capabilit...
Datasheet PDF File NTD5865N PDF File

NTD5865N
NTD5865N

Overview
NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features • Low Gate Charge • Fast Switching • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) Continuous Drain Current (RqJC) Power Dissipation (RqJC) Steady State TC = 25°C TC = 100°C TC = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature VDSS VGS VGS ID PD IDM TJ, Tstg 60 ±20 ±30 43 31 71 192 −55 to 175 V V V A W A °C Source Current (Body Diode) IS 43 A Single Pulse Drain−to−Source L = 0.
1 mH Avalanche Energy EAS IAS 36 mJ 27 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device...


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