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EIA1114-2

Excelics Semiconductor
Part Number EIA1114-2
Manufacturer Excelics Semiconductor
Description 11.0-14.0 GHz 2-Watt Internally Matched Power FET
Published Feb 17, 2011
Detailed Description EIA1114-2 UPDATED 07/25/2006 11.0-14.0GHz 2-Watt Internally Matched Power FET FEATURES • • • • • • • • 11.0– 14.0GHz B...
Datasheet PDF File EIA1114-2 PDF File

EIA1114-2
EIA1114-2

Overview
EIA1114-2 UPDATED 07/25/2006 11.
0-14.
0GHz 2-Watt Internally Matched Power FET FEATURES • • • • • • • • 11.
0– 14.
0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.
5 dBm Output Power at 1dB Compression 7.
0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 dBc IM3 at Po = 22.
5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .
060 MIN.
Excelics EIA1114-2 YYWW SN .
094 .
382 .
060 MIN.
.
650±.
008 .
512 GATE .
319 DRAIN .
022 .
045 .
004 .
070 ±.
008 .
129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.
0-14.
0GHz VDS = 8 V, IDSQ ≈ 750mA Gain at 1dB Compression f = 11.
0-14.
0GHz VDS = 8 V, IDSQ ≈ 750mA Gain Flatness f = 11.
0-14.
0GHz VDS = 8 V, IDSQ ≈ 750mA Power Added Efficiency at 1dB Compression f = 11.
0-14.
0GHz VDS = 8 V, IDSQ ≈ 750mA Drain Current at 1dB Compression f = 11.
0-14.
0GHz Caution! ESD sensitive device.
MI...


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