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EIA1114-4

Excelics Semiconductor
Part Number EIA1114-4
Manufacturer Excelics Semiconductor
Description 11.0-14.0 GHz 4-Watt Internally Matched Power FET
Published Feb 17, 2011
Detailed Description EIA1114-4 UPDATED 07/25/2006 11.0-14.0GHz 4-Watt Internally Matched Power FET FEATURES • • • • • • • • 11.0– 14.0GHz B...
Datasheet PDF File EIA1114-4 PDF File

EIA1114-4
EIA1114-4

Overview
EIA1114-4 UPDATED 07/25/2006 11.
0-14.
0GHz 4-Watt Internally Matched Power FET FEATURES • • • • • • • • 11.
0– 14.
0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.
5 dBm Output Power at 1dB Compression 7.
0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 dBc IM3 at Po = 25.
5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .
060 MIN.
Excelics EIA1114-4 YYWW SN .
094 .
382 .
060 MIN.
.
650±.
008 .
512 GATE .
319 DRAIN .
022 .
045 .
004 .
070 ±.
008 .
129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.
0-14.
0GHz VDS = 8 V, IDSQ ≈ 1500mA Gain at 1dB Compression f = 11.
0-14.
0GHz VDS = 8 V, IDSQ ≈ 1500mA Gain Flatness f = 11.
0-14.
0GHz VDS = 8 V, IDSQ ≈ 1500mA Power Added Efficiency at 1dB Compression f = 11.
0-14.
0GHz VDS = 8 V, IDSQ ≈ 1500mA Drain Current at 1dB Compression f = 11.
0-14.
0GHz Caution! ESD sensitive device.
MIN 35.
5 6.
0 TYP 36.
5 7.
0 MAX UNITS dBm dB ±0.
8 25 1700 -36 2880 -1.
0 5.
5 3600 -2.
5 6.
0 o dB % 2000 mA dBc mA V C/W Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.
5 dBm S.
C.
L2 VDS = 8 V, IDSQ ≈ 65% IDSS f = 14.
0GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 29 mA 2) S.
C.
L.
= Single Carrier Level.
Note: 1) Tested with 100 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 10 -5 43.
2mA -7.
2mA 35.
5dBm o 175 C o -65 to +175 C CONTINUOUS2 8V -3V 14.
4mA -2.
4mA @ 3dB Compression 175 oC -65 to +175 oC 25W Vds Vgs Igsf Igsr Pin www.
DataSheet4U.
com Tch Tstg Pt 25W Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of the above r...


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