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EIA1819-1P

Excelics Semiconductor
Part Number EIA1819-1P
Manufacturer Excelics Semiconductor
Description 18.7-19.7GHz 1W Internally Matched Power FET
Published Feb 17, 2011
Detailed Description Excelics • • • • • • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPI...
Datasheet PDF File EIA1819-1P PDF File

EIA1819-1P
EIA1819-1P

Overview
Excelics • • • • • • 18.
7-19.
7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.
0/+29.
5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.
5/5.
5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1819-1P Not recommended for new designs.
Contact factory.
Effective 03/2003 18.
7-19.
7GHz, 1W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1819-1P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=18.
7-19.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Gain at 1dB Compression f=18.
7-19.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Power Added Efficiency at 1dB compression f=18.
7-19.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=18.
7-19.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=6mA -13 550 rd EIB1819-1P MAX MIN 29.
0 5.
0 TYP 29.
5 5.
5 MAX UNIT dBm dB MIN 29 6.
0 TYP 30.
0 6.
5 P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth 25 440 37 720 760 -1.
0 -15 16 -2.
5 850 550 20 425 43* 720 360 -2.
0 -15 16 o % mA dBm 850 mA mS -3.
5 V V C/W Drain Breakdown Voltage Igd=2.
4mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical –45dBc IM3 at Pout=20dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch www.
DataSheet4U.
com Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 90mA 32dBm 175oC -65/175oC 8.
5W 8V -3V Idss 15mA @ 3dB Compression 150oC -65/150oC 7.
1W CONTINUOUS2 Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc.
, 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-1711 Fax: (408) ...


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