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EIA1819-2P

Excelics Semiconductor
Part Number EIA1819-2P
Manufacturer Excelics Semiconductor
Description 18.7-19.7GHz 2W Internally Matched Power FET
Published Feb 17, 2011
Detailed Description Excelics • • • • • • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPI...
Datasheet PDF File EIA1819-2P PDF File

EIA1819-2P
EIA1819-2P

Overview
Excelics • • • • • • 18.
7-19.
7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.
0/+32.
5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.
0/5.
0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1819-2P Not recommended for new designs.
Contact factory.
Effective 03/2003 18.
7-19.
7GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1819-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=18.
7-19.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Gain at 1dB Compression f=18.
7-19.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Power Added Efficiency at 1dB compression f=18.
7-19.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=18.
7-19.
7GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=12mA -13 1100 rd EIB1819-2P MAX MIN 32.
0 4.
5 TYP 32.
5 5.
0 MAX UNIT dBm dB MIN 32.
0 5.
5 TYP 33.
0 6.
0 P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth 25 880 40 1440 1500 -1.
0 -15 8 -2.
5 1700 1100 20 850 46* 1360 700 -2.
0 -15 8 o % mA dBm 1700 mA mS -3.
5 V V C/W Drain Breakdown Voltage Igd=4.
8mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical –45dBc IM3 at Pout=23dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch www.
DataSheet4U.
com Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 180mA 32dBm 175oC -65/175oC 17W 8V -3V Idss 30mA @ 3dB Compression 150oC -65/150oC 14.
2W CONTINUOUS2 Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc.
, 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-1711 Fa...


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