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PJF8N60

Pan Jit International
Part Number PJF8N60
Manufacturer Pan Jit International
Description 600V N-Channel Enhancement Mode MOSFET
Published Feb 26, 2011
Detailed Description PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=4.0A • • • • • •...
Datasheet PDF File PJF8N60 PDF File

PJF8N60
PJF8N60


Overview
PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, RDS(ON)=1.
2Ω@VGS=10V, ID=4.
0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP8N60 PJF8N60 MARKING P8N60 F8N60 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J P 8 N6 0 600 +3 0 8 32 125 1 .
0 P J F 8 N6 0 Uni ts V V 8 32 45 0 .
3 9 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 500 1 6 2 .
5 2 .
7 8 100 O C Avalanche Energy with Single Pulse IAS=8.
0A, VDD=50V, L=15.
6mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance www.
DataSheet4U.
com Note: 1.
Maximum DC current limited by the package O PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE May 10,2010-REV.
01 PAGE .
1 PJP8N60 / PJF8N60 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n.
Typ .
Ma x.
Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 4.
0A VDS=600V, VGS=0V V GS =+3 0 V, V D S =0 V 600 2 .
0 - 1.
0 - 4 .
0 ...


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