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CED83A3G

Chino-Excel Technology
Part Number CED83A3G
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 93A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 7.4mΩ @VGS =...
Datasheet PDF File CED83A3G PDF File

CED83A3G
CED83A3G

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 93A, RDS(ON) = 4.
8mΩ @VGS = 10V.
RDS(ON) = 7.
4mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED83A3G/CEU83A3G D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 93 372 75 0.
5 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2 62.
5 Units C/W C/W www.
DataSheet4U.
com Details are subject to change without notice .
1 Rev 1.
2010.
Oct http://www.
cetsemi.
com CED83A3G/CEU83A3G Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 50A VDS = 15V, ID = 40A, VGS = 5V VDD = 15V, ID = 40A, VGS= 4.
5V, RGEN= 4.
7Ω 31 26 45 24 37 7 17 50 1.
2 62 52 90 48 48.
1 ns ns ns ns nC nC nC A V Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.
0 MHz 2855 510 390 pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 30A VGS = 4.
5V, ID = 20A 1 3.
8 5.
4 3 4.
8 7.
4 V mΩ mΩ BVDSS IDSS IGSSF IGSS...


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