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CED83A3

CET
Part Number CED83A3
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description CED83A3/CEU83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 80A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) ...
Datasheet PDF File CED83A3 PDF File

CED83A3
CED83A3

Overview
CED83A3/CEU83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 80A, RDS(ON) = 6mΩ @VGS = 10V.
RDS(ON) = 9mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 30 Units V V A A W W/ C mJ A C ±20 80 350 70 0.
56 875 35 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
8 50 Units C/W C/W Rev 1.
2005.
August 6 - 126 http://www.
cetsemi.
com CED83A3/CEU83A3 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 20A VDS = 15V, ID = 16A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 25.
7 10 128 34 50 20.
8 19 20 1.
5 50 20 200 70 65 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 30V, VGS ...


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