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CEU04N7G

Chino-Excel Technology
Part Number CEU04N7G
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 3.5A, RDS(ON) = 3.3Ω @VGS = 10V. Super high dense cell...
Datasheet PDF File CEU04N7G PDF File

CEU04N7G
CEU04N7G

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 3.
5A, RDS(ON) = 3.
3Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED04N7G/CEU04N7G D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 700 Units V V A A W W/ C C ±30 3.
5 14 56 0.
45 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
2 50 Units C/W C/W www.
DataSheet4U.
com Details are subject to change without notice .
1 Rev 3.
2009.
July http://www.
cetsemi.
com CED04N7G/CEU04N7G Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 3.
5A VDS = 480V, ID = 4A, VGS = 10V VDD = 300V, ID = 4A, VGS = 10V, RGEN = 25Ω 18 17 40.
5 19 14 3 6 3.
5 1.
5 36 34 81 38 18.
2 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 40V, ID = 1A VDS = 25V, VGS = 0V, f = 1.
0 MHz 2 595 80 20 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 1.
8A 2 2.
5 4 3.
3 V Ω BVDSS IDSS IGSSF IGSSR VG...


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