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CEU04N65

CET
Part Number CEU04N65
Manufacturer CET
Description N-Channel MOSFET
Published Feb 9, 2016
Detailed Description CED04N65/CEU04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 3.2A, RDS(ON) = 2.8Ω ...
Datasheet PDF File CEU04N65 PDF File

CEU04N65
CEU04N65

Overview
CED04N65/CEU04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 3.
2A, RDS(ON) = 2.
8Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 650 ±30 3.
2 2 12.
8 70 0.
56 Single Pulsed Avalanche Energy d EAS 220 Single Pulsed Avalanche Current d IAS 4.
2 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
8 50 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2012.
Oct http://www.
cetsemi.
com CED04N65/CEU04N65 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 650 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 1.
6A 2 4 2.
3 2.
8 V Ω Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss VDS = 25V, VGS = 0V, f = 1.
0 MHz 610 75 pF pF Crss 15 pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Tim...


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