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TS4148RY

Taiwan Semiconductor
Part Number TS4148RY
Manufacturer Taiwan Semiconductor
Description 400mW High Speed SMD Switching Diode
Published Mar 24, 2011
Detailed Description TS4148 RY 400mW High Speed SMD Switching Diode Small Signal Diode 0805 A Features —Designed for mounting on small surfa...
Datasheet PDF File TS4148RY PDF File

TS4148RY
TS4148RY

Overview
TS4148 RY 400mW High Speed SMD Switching Diode Small Signal Diode 0805 A Features —Designed for mounting on small surface.
—Extremely thin/leadless package —High mounting capability,strong surage with stand, high reliability.
—Pb free version and RoHS compliant —Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code B C D E Dimensions A B C D E Unit (mm) Min 1.
80 1.
05 0.
25 0.
75 1.
30 Max 2.
20 1.
45 0.
65 0.
95 0.
90 Unit (inch) Min Max 0.
071 0.
086 0.
410 0.
570 0.
010 0.
026 0.
029 0.
037 0.
051 0.
034 Mechanical Data —Case :0805 standard package, molded plastic —Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed —High temperature soldering guaranteed: 260°C/10s —Polarity : Indicated by cathode band —Weight : 0.
006 gram (approximately) Ordering Information Part No.
TS4148 RY Package 0805 Packing 5Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings Type Number Power Dissipation Non-Repetitive Peak Reverse Voltage Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current Tp=1sec square waveform 8.
3ms single half sine waveform Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range RθJA TJ, TSTG IFSM 0.
5 2.
0 375 -65 to + 175 °C/W °C A Symbol PD VRSM VRRM IFRM IO Value 400 100 75 300 150 Units mW V V mA mA Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current IF= V R= V R= (Note3) (Note 2) 10mA 20V 75V Symbol V(BR) VF IR CJ Trr Min Max 75 1.
00 25 5 4.
0 4 Units V V nA μA pF ns www.
DataSheet4U.
com Junction Capacitance Reverse Recovery Time VR=0, f=1.
0MHz Notes:1.
Valid provided that electrodes are kept at ambient temperature Notes:2.
Test Condition : I R=100μA Notes:3.
Test Condition : I F=10mA, IR=1mA,RL=100Ω Version : E09 TS4148 RY 400mW High Speed SMD Switching Diode Small...


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