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TS4148RZ

Taiwan Semiconductor
Part Number TS4148RZ
Manufacturer Taiwan Semiconductor
Description 150mW High Speed SMD Switching Diode
Published Mar 24, 2011
Detailed Description TS4148 RZ 150mW High Speed SMD Switching Diode Small Signal Diode 0603 A D B Features —Designed for mounting on small s...
Datasheet PDF File TS4148RZ PDF File

TS4148RZ
TS4148RZ

Overview
TS4148 RZ 150mW High Speed SMD Switching Diode Small Signal Diode 0603 A D B Features —Designed for mounting on small surface.
—Extremely thin/leadless package —High mounting capability,strong surage with stand, high reliability.
—Pb free version and RoHS compliant —Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C E Unit (mm) Min 1.
60 0.
80 0.
70 Typ.
Typ.
Max 1.
80 1.
00 0.
85 0.
45 0.
70 Unit (inch) Min Max 0.
063 0.
071 0.
031 0.
039 0.
027 0.
033 Typ.
Typ.
0.
018 0.
028 Mechanical Data —Case :0603 standard package, molded plastic —Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed —High temperature soldering guaranteed: 260°C/10s —Polarity : Indicated by cathode band —Weight : 0.
003 gram (approximately) Dimensions A B C D E Ordering Information Part No.
TS4148 RZ Package 0603 Packing 4Kpcs/7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings Type Number Power Dissipation Non-Repetitive Peak Reverse Voltage Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width= 1 μsec Pulse Width= 1 msec Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range RθJA TJ, TSTG IFSM 4.
0 1.
0 666 -40 to + 125 °C/W °C A Symbol PD VRSM VRRM IFRM IO Value 150 100 75 300 150 Units mW V V mA mA Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current IF= V R= V R= (Note3) (Note 2) 50mA 20V 75V Symbol V(BR) VF IR CJ Trr Min Max 75 1.
00 25 2.
5 4.
0 4 Units V V nA μA pF ns www.
DataSheet4U.
com Junction Capacitance Reverse Recovery Time VR=0, f=1.
0MHz Notes:1.
Valid provided that electrodes are kept at ambient temperature Notes:2.
Test Condition : I R=100μA Notes:3.
Test Condition : I F=IR=30mA, RL=100Ω, IRR=3mA Version : C09 TS4148 RZ 150mW High Speed SMD Switching Diode Small Signal Diode...


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