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BAS3010B

Infineon Technologies
Part Number BAS3010B
Manufacturer Infineon Technologies
Description Medium Power AF Schottky Diode
Published Apr 14, 2011
Detailed Description BAS3010B... Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Low forward voltage, low rev...
Datasheet PDF File BAS3010B PDF File

BAS3010B
BAS3010B

Overview
BAS3010B.
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Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Low forward voltage, low reverse current • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAS3010B-03W  Type BAS3010B-03W Parameter Diode reverse voltage2) Forward current 2) Package SOD323 Configuration single Symbol VR IF Value 30 1 1 3.
5 10 150 -65 .
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125 -65 .
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150 Marking 2/ red Unit V A Maximum Ratings at TA = 25°C, unless otherwise specified Average rectified forward current (50/60Hz, sinus) I FAV Repetitive peak forward current I FRM (tp ≤ 1 ms, D ≤ 0.
5) Non-repetitive peak surge forward current (t ≤ 10 ms) Junction temperature Operating temperature range Storage temperature www.
DataSheet4U.
com 1Pb-containing 2 I FSM Tj T op T stg °C package may be available upon special request For TA > 25°C the derating of VR and IF has to be considered.
Please refer to the attached curves.
1 2007-04-19 BAS3010B.
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Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 82 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Reverse current2) IR VR = 5 V VR = 10 V VR = 30 V Forward voltage2) IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IF = 1 A VF 230 300 360 420 480 280 350 420 480 550 5 10 20 Unit µA mV AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz 1For CT - 33 40 pF calculation of RthJA please refer to Application Note Thermal Resistance test: tp = 300 µs; D = 0.
01 2Pulsed www.
DataSheet4U.
com 2 2007-04-19 BAS3010B.
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Diode capacitance CT = ƒ (VR) f = 1MHz Reverse current IR = ƒ (TA) VR = Parameter 10 -2 A pF 120 10 -3 CT 80 IR 60 10 -4 10 -5 40 10 -6 20 VR = 30 V 20 V 10 V 5V 0 0 5 10 15 20 V 30 10 -7 0 25 50 75 100 °C 150 VR TA Reverse current IR = ƒ(VR) TA = Parameter 10 -2 A Forward Voltage...


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