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SBP13007-H2

SemiWell Semiconductor
Part Number SBP13007-H2
Manufacturer SemiWell Semiconductor
Description High Voltage Fast-Switching NPN Power Transistor
Published Apr 14, 2011
Detailed Description SemiWell Semiconductor SBP13007-H2 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Spe...
Datasheet PDF File SBP13007-H2 PDF File

SBP13007-H2
SBP13007-H2


Overview
SemiWell Semiconductor SBP13007-H2 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 60ns@5.
0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.
0A/1.
0A) - Wide Reverse Bias S.
O.
A Symbol ○ 2.
Collector 1.
Base ○ c ○ 3.
Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as switching mode power supply.
TO-220 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP < 5 ms ) Base Current Base Peak Current ( tP < 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max.
Operating Junction Temperature Value 700 400 9.
0 8.
0 16 4.
0 8.
0 80 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJC RθJA www.
DataSheet4U.
com Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 1.
56 62.
5 Units °C/W °C/W Oct, 2002.
Rev.
2 Copyright@SemiWell Semiconductor Co.
, Ltd.
, All rights reserved 1/6 SBP13007-H2 Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.
5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 2.
0A IC = 5.
0A IC = 8.
0A IC = 5.
0A IB = 0.
4A IB = 1.
0A IB = 2.
0A IB = 1.
0A TC = 100 °C IB = 0.
4A IB = 1.
0A IB = 1.
0A TC = 100 °C VCE = 5V VCE = 5V VCC = 125V IB2 = - 1.
0A TC = 100 °C Min - Typ - Max 1.
0 5.
0 - Units mA 400 - V VCE(sat) Collector-Emitter Saturation Voltage - - 0.
5 1.
0 2.
5 2.
5 V VBE(sat) Base-Emitter Saturation Voltage IC = 2.
0A IC = 5.
0A IC = 5.
0A - - 1.
2 1.
6 1.
5 V hFE DC Current Gain Resistive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time IC = 2.
0A IC = 5.
0A ...



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