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SBP13007-O

WINSEMI SEMICONDUCTOR
Part Number SBP13007-O
Manufacturer WINSEMI SEMICONDUCTOR
Description High Voltage Fast-Switching NPN Power Transistor
Published Apr 14, 2011
Detailed Description www.DataSheet4U.com SBP13007-O High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆...
Datasheet PDF File SBP13007-O PDF File

SBP13007-O
SBP13007-O

Overview
www.
DataSheet4U.
com SBP13007-O High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B General Description This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply.
C E TO220 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.
0 8.
0 16 4.
0 8.
0 80 2.
05 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.
56 62.
5 Units ℃/W ℃/W Jan 2008.
Rev.
0 Copyright@WinSemi Semiconductor Co.
,Ltd.
,All rights reserved.
T01-3 www.
DataSheet4U.
com SBP13007-O Electrical Characteristics (TC=25℃ unless otherwise noted) Value Parameter Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Ic=2.
0A,Ib=0.
4A Ic=5.
0A,Ib=1.
0A VCE(sat) Collector-Emitter Saturation Voltage Ic=8.
0A,Ib=2.
0A Ic=5.
0A,Ib=1.
0A Tc=100℃ Ic=2.
0A,Ib=0.
4A VBE(sat) Base-Emitter Saturation Voltage Ic=5.
0A,Ib=1.
0A Ic=5.
0A,Ib=1.
0A Tc=100℃ ICBO Collector-Base Cutoff Current (Vbe=-1.
5V) DC Current Gain Resistive Load ts tf Storage Time Fall Time Inductive Load ts tf Storage Time Fall Time Inductive Load ts tf Storage Time Fall Time Vcb=700V Vcb=700V, Tc=100℃ Vce=5V,Ic=2.
0A Vce=5V, Ic=5.
0A VCC=125V , IB1=1.
0A , Tp=25㎲ Ic=5.
0A IB2=-1.
0A 10 5 1.
5 0.
17 3.
0 0.
4 ㎲ 1.
0 5.
0 40 40 mA 1.
2 1.
6 1.
5 V Min 400 Typ Max 1.
0 2.
0 3.
0 2.
5 V V Symbol VCEO(sus) Units V V hFE VCC=15V ,Ic=5A IB1=1.
0A , IB2=-2.
5A L=...


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