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2SK3652

Guangdong Kexin Industrial
Part Number 2SK3652
Manufacturer Guangdong Kexin Industrial
Description N-channel Enhancement Mode MOSFET
Published Apr 27, 2011
Detailed Description SMD Type Transistors IC N-channel Enhancement Mode MOSFET 2SK3652 TO-263 + 0 .1 1 .2 7 -0 .1 Unit: mm +0.1 1.27-0.1 +0...
Datasheet PDF File 2SK3652 PDF File

2SK3652
2SK3652

Overview
SMD Type Transistors IC N-channel Enhancement Mode MOSFET 2SK3652 TO-263 + 0 .
1 1 .
2 7 -0 .
1 Unit: mm +0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2 Features Low on-resistance, low Qg High avalanche resistance For high-speed switching + 0 .
2 8 .
7 -0 .
2 +0.
1 1.
27-0.
1 0.
1max +0.
1 0.
81-0.
1 + 0 .
2 5 .
2 8 -0 .
2 2.
54 +0.
2 -0.
2 +0.
1 5.
08-0.
1 + 0 .
2 2 .
5 4 -0 .
2 + 0 .
2 1 5 .
2 5 -0 .
2 2.
54 +0.
2 0.
4-0.
2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature * L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25 Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 230 30 50 200 2 200 3 100 150 -55 to +150 Unit V V A A mJ W www.
DataSheet4U.
com 5 .
6 0 1 Gate 2 Drain 3 Source www.
kexin.
com.
cn 1 SMD Type 2SK3652 Electrical Characteristics Ta = 25 Parameter Gate-drain surrender voltage Gate threshold voltage Drain-sou...


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