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11N50

Unisonic Technologies
Part Number 11N50
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published May 1, 2011
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 11N50 is an ...
Datasheet PDF File 11N50 PDF File

11N50
11N50

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 11N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 11N50 is an N-channel enhancement mode Power FET.
It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 11N50 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.
1 TO-220F1 „ FEATURES * Low Gate Charge: 43nC (TYP.
) * 11A, 500V, RDS(ON)=0.
55Ω @ VGS=10V * Fast Switching * Low CRSS: 25pF (TYP.
) * With 100% Avalanche Tested * Improved dv/dt Capability * Fast Recovery Body Diode: 90ns (TYP.
) „ SYMBOL D G S „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N50L- TF1-T 11N50G-TF1-T Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube www.
DataSheet4U.
com www.
unisonic.
com.
tw Copyright © 2010 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-462.
a 11N50 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 500 V Gate to Source Voltage VGSS ±30 V TC=25°C ID 11 (Note 1) A Continuous Drain Current ID 7 (Note 1) A TC=100°C Pulsed Drain Current (Note 2) IDM 44 (Note 1) A Single Pulsed Avalanche Energy(Note 3) EAS 670 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 V/ns TC=25°C 48 W Total Power Dissipation PD Derate above 25°C 0.
39 W/°C Operating Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1.
Drain current limited by maximum junction temperature 2.
Repetitive Rating : Pulse width limited by maximum junction temperature 3.
L=10mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4.
ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 5.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only an...


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