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IXFA130N10T

IXYS Corporation
Part Number IXFA130N10T
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intr...
Datasheet PDF File IXFA130N10T PDF File

IXFA130N10T
IXFA130N10T

Overview
Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP130N10T Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM 130 A 120 A 350 A TC = 25C TC = 25C 65 A 750 mJ TC = 25C 360 W -55 .
.
.
+175 C 175 C -55 .
.
.
+175 C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10.
.
65 / 2.
2.
.
14.
6 1.
13 / 10 N/lb Nm/lb.
in TO-263 TO-220 2.
5 g 3.
0 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 1mA IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on...


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