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IXFA130N10T2

IXYS Corporation
Part Number IXFA130N10T2
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA130N10T2 IXF...
Datasheet PDF File IXFA130N10T2 PDF File

IXFA130N10T2
IXFA130N10T2

Overview
TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA130N10T2 IXFP130N10T2 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS,TJ  175C TC = 25C 130 120 300 65 800 20 360 -55 .
.
.
+175 175 -55 .
.
.
+175 A A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for ...


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