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SPB21N10

Infineon Technologies
Part Number SPB21N10
Manufacturer Infineon Technologies
Description SIPMOS Power-Transistor
Published May 27, 2011
Detailed Description Preliminary data SPI21N10 SPP21N10,SPB21N10 SIPMOS Power-Transistor Feature  N-Channel  Enhancement mode 175°C op...
Datasheet PDF File SPB21N10 PDF File

SPB21N10
SPB21N10

Overview
Preliminary data SPI21N10 SPP21N10,SPB21N10 SIPMOS Power-Transistor Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 80 21 P-TO220-3-1 V m A Type SPP21N10 SPB21N10 SPI21N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4116 Q67042-S4102 Q67042-S4117 Marking 21N10 21N10 21N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 21 15.
0 Unit A Pulsed drain current www.
DataSheet4U.
net ID puls EAS dv/dt VGS Ptot Tj , Tstg 84 130 6 ±20 90 -55.
.
.
+175 55/175/56 mJ kV/µs V W °C TC=25°C Avalanche energy, single pulse ID =21 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =21A, VDS =80V, di/dt=200A/µs, Tjmax =175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-31 Preliminary data SPI21N...


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