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SIHFP440

Vishay Siliconix
Part Number SIHFP440
Manufacturer Vishay Siliconix
Description Power MOSFET
Published May 29, 2011
Detailed Description IRFP440, SiHFP440 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SIHFP440 PDF File

SIHFP440
SIHFP440

Overview
IRFP440, SiHFP440 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 11 30 Single D FEATURES 500 0.
85 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP440PbF SiHFP440-E3 IRFP440 SiHFP440 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted www.
DataSheet4U.
net PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque TC = 25 °C for 10 s 6-32 or M3 screw LIMIT 500 ± 20 8.
8 5.
6 35 1.
2 480 8.
8 15 150 3.
5 - 55 to + 150 300d 10 1.
1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 11 mH, RG = 25 Ω, IAS = 8.
8 A (see fig.
12).
c.
ISD ≤ 8.
8 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 1...


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