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SIHFP460

Vishay Siliconix
Part Number SIHFP460
Manufacturer Vishay Siliconix
Description Power MOSFET
Published May 29, 2011
Detailed Description IRFP460, SiHFP460 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SIHFP460 PDF File

SIHFP460
SIHFP460

Overview
IRFP460, SiHFP460 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 29 110 Single D FEATURES 500 0.
27 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT TO-247 DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP460PbF SiHFP460-E3 IRFP460 SiHFP460 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER www.
DataSheet4U.
net SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 ± 20 20 13 80 2.
2 960 20 28 280 3.
5 - 55 to + 150 300d 10 1.
1 UNIT V Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A W/°C mJ A mJ W V/ns °C lbf · in N·m Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque TC = 25 °C for 10 s 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 4.
3 mH, RG = 25 Ω, IAS = 20 A (see fig.
12).
c.
ISD ≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C...


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