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IRFP450N

Vishay Siliconix
Part Number IRFP450N
Manufacturer Vishay Siliconix
Description Power MOSFET
Published May 29, 2011
Detailed Description IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qg...
Datasheet PDF File IRFP450N PDF File

IRFP450N
IRFP450N

Overview
IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.
) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 77 26 34 Single D FEATURES 500 0.
37 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free RoHS COMPLIANT TO-247 APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching G TYPICAL SMPS TOPOLOGIES S D G S N-Channel MOSFET • Two Transistor Forward • Half Bridge and Full Bridge • PFC Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP450NPbF SiHFP450N-E3 IRFP450N SiHFP450N ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage www.
DataSheet4U.
net SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 ± 30 14 8.
8 56 1.
6 170 14 20 200 5.
0 - 55 to + 150 300d 10 1.
1 UNIT V Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a.
b.
c.
d.
A W/°C mJ A mJ W V/ns °C lbf · in N·m TC = 25 °C for 10 s 6-32 or M3 screw Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
Starting TJ = 25 °C, L = 1.
7 mH, RG = 25 Ω, IAS = 14 A (see fig.
12).
ISD ≤ 14 A, dI/dt ≤ 510 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
1.
6 mm from case.
Document Number: 91232 S-Pending-Rev.
b, 26-Jun-08 WORK-IN-PROGRESS www.
vishay.
com 1 IRFP450N, SiHFP450N Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS R...


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