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2N5019

Micross
Part Number 2N5019
Manufacturer Micross
Description P-CHANNEL JFET
Published Jun 9, 2011
Detailed Description 2N5019 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5019 The 2N5019 is a single P-Channel JFET switc...
Datasheet PDF File 2N5019 PDF File

2N5019
2N5019

Overview
2N5019 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5019 The 2N5019 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching.
The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications.
(See Packaging Information).
FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N5019  ZERO OFFSET VOLTAGE  LOW ON RESISTANCE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  rDS(on) ≤ 150Ω  Maximum Temperatures  Storage Temperature  ‐55°C to +200°C  ƒ Low Insertion Loss Operating Junction Temperature  ‐55°C to +200°C  ƒ No offset or error voltage generated by closed Maximum Power Dissipation  switch Continuous Power Dissipation   500mW  ƒ Purely resistive MAXIMUM CURRENT 2N5019 Applications: Gate Current (Note 1)  IG = ‐50mA  ƒ Analog Switches MAXIMUM VOLTAGES  ƒ Commutators Gate to Drain Voltage  VGDS = 30V  ƒ Choppers Gate to Source Voltage  VGSS = 30V      2N5019 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  30  ‐‐  ‐‐    IG = 1µA,   VDS = 0V  V  VGS(off)  Gate to Source Cutoff Voltage  ‐‐  ‐‐  5  VDS = ‐15V, ID = ‐1µA  VDS(on)  Drain to Source On Voltage  ‐‐  ‐‐  ‐0.
5  VGS = 0V, ID = ‐3mA  IDSS  Drain to Source Saturation Current (Note 2)  ‐5  ‐‐  ‐‐  mA  VDS = ‐20V, VGS = 0V  IGSS  Gate Reverse Current  ‐‐  ‐‐  2  nA  VGS = 15V,  VDS = 0V  ID(off)  Drain Cutoff Current  ‐‐  ‐‐  ‐10  VDS = ‐15V, VGS = 12V  ‐‐  ‐‐  ‐10  µA  VDS = ‐15V, VGS = 7V  IDGO  Drain Reverse Current  ‐‐  ‐‐  ‐2  nA  VDG = ‐15V, IS = 0A  rDS(on)  Drain to Source On Resistance  ‐‐  ‐‐  150  Ω  ID = ‐1mA,   VGS = 0V  2N5019 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  MIN  TYP.
  MAX  UNITS  CONDITIONS  rDS(on)  Drain to Source On Resistance  ‐‐  ‐‐  150  Ω  ID = 0A,   VGS = 0V,   f = 1kHz  Ciss  Input Capacitance ...


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