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2SA1987

Inchange Semiconductor
Part Number 2SA1987
Manufacturer Inchange Semiconductor
Description Power Transistor
Published Jun 30, 2011
Detailed Description isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-...
Datasheet PDF File 2SA1987 PDF File

2SA1987
2SA1987

Overview
isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Complement to Type 2SC5359 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.
5 A 180 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1987 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER COND...


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