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2SA1986

Part Number	2SA1986
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Jun 30, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1986 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-...
Datasheet	2SA1986 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1986 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Complement to Type 2SC5358 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=...

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