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2SA1909

Part Number	2SA1909
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Jun 30, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1909 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good ...
Datasheet	2SA1909 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1909 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5101 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150...

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