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2SA1908

Inchange Semiconductor
Part Number 2SA1908
Manufacturer Inchange Semiconductor
Description Power Transistor
Published Jun 30, 2011
Detailed Description isc Silicon PNP Power Transistor 2SA1908 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good ...
Datasheet PDF File 2SA1908 PDF File

2SA1908
2SA1908

Overview
isc Silicon PNP Power Transistor 2SA1908 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5100 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturati...


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