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2SA1263N

Part Number	2SA1263N
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -5A ·Good L...
Datasheet	2SA1263N PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.
0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC3180N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
6 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1263N isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1263N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT ...

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