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2SB940A

Part Number	2SB940A
Manufacturer	Panasonic Semiconductor
Description	Power Transistors
Published	Jul 7, 2011
Detailed Description	Power Transistors 2SB0940 (2SB940), 2SB0940A (2SB940A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power...
Datasheet	2SB940A PDF File

Overview

Power Transistors 2SB0940 (2SB940), 2SB0940A (2SB940A) www.
DataSheet4U.
net Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264, 2SD1264A ■ Features • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one screw 16.
7±0.
3 Unit: mm 0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 4.
2±0.
2 4.
2±0.
2 2.
7±0.
2 7.
5±0.
2 φ 3.
1±0.
1 Solder Dip (4.
0) 1.
4±0.
1 1.
3±0.
2 0.
5+0.
2 –0.
1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage 2SB0940 (Base open) 2SB0940A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −200 −150 −180 −6 −2 −3 30 2 150 −55 to +150 °C °C V A A W Unit V V 14.
0±0.
5 0.
8±0.
1 2.
54±0.
3 5.
08±0.
5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0940 2SB0940A VEBO VBE ICBO IEBO hFE1 * Symbol VCBO VCEO Conditions IC = −50 µA, IE = 0 IC = −5 mA, IB = 0 IE = −500 µA, IC = 0 VCE = −10 V, IC = −400 mA VCB = −200 V, IE = 0 VEB = −4 V, IC = 0 VCE = −10 V, IC = −150 mA VCE = −10 V, IC = −400 mA IC = −500 mA, IB = −50 mA VCE = −10 V, IC = − 0.
5 A, f = 10 MHz Min −200 −150 −180 −6 Typ Max Unit V V Emitter-base voltage (Collector open) Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio V −1 −50 −50 V µA µA  V MHz 60 50 240 −1 30 hFE2 Collector-emitter saturation voltage Transition frequency VCE(sat) fT Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE1 Q 60 to 140 ...

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