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2SB941A

Part Number	2SB941A
Manufacturer	Panasonic Semiconductor
Description	Power Transistors
Published	Jul 7, 2011
Detailed Description	Power Transistors 2SB941, 2SB941A www.DataSheet4U.net Silicon PNP epitaxial planar type For low-frequency power amplif...
Datasheet	2SB941A PDF File

Overview

Power Transistors 2SB941, 2SB941A www.
DataSheet4U.
net Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A Unit: mm 0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1 1.
3±0.
2 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 4.
2±0.
2 s Features q q q 7.
5±0.
2 Solder Dip 4.
0 14.
0±0.
5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB941 2SB941A 2SB941 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit V emitter voltage 2SB941A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 16.
7±0.
3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB941 2SB941A 2SB941 2SB941A 2SB941 2SB941A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = –1A, IB1 = – 0.
1A, IB2 = 0.
1A Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.
375A VCE = –10V, IC = – 0.
5A, f = 10MHz 30 0.
5 1.
2 0.
3 –60 –80 70 10 –1.
8 –1.
2 V V MHz µs µs µs 250 min typ max –200 –200 –300 –300 –1 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.
Rank hFE1 1 Power ...

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