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2SB0946

Part Number	2SB0946
Manufacturer	Panasonic Semiconductor
Description	Power Transistors
Published	Jul 7, 2011
Detailed Description	Power Transistors 2SB0946 (2SB946) www.DataSheet4U.net Silicon PNP epitaxial planar type For power switching Complemen...
Datasheet	2SB0946 PDF File

Overview

Power Transistors 2SB0946 (2SB946) www.
DataSheet4U.
net Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw 16.
7±0.
3 Unit: mm 0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 4.
2±0.
2 4.
2±0.
2 2.
7±0.
2 7.
5±0.
2 φ 3.
1±0.
1 Solder Dip (4.
0) 1.
4±0.
1 1.
3±0.
2 0.
5+0.
2 –0.
1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −7 −15 40 2 150 −55 to +150 °C °C Unit V V V A A W 14.
0±0.
5 0.
8±0.
1 2.
54±0.
3 5.
08±0.
5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.
1 A VCE = −2 V, IC = −3 A IC = −5 A, IB = − 0.
25 A IC = −5 A, IB = − 0.
25 A VCE = −10 V, IC = − 0.
5 A, f = 10 MHz IC = −3 A, IB1 = − 0.
3 A, IB2 = 0.
3 A VCC = −50 V 30 0.
5 1.
5 0.
1 45 60 260 − 0.
5 −1.
5 V V MHz µs µs µs Min −80 −10 −50 Typ Max Unit V µA µA  Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE2 R 60 to 120 Q 90 to 180 P 130 to 260 Note) The part number in the parenthesis shows c...

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