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2SB947A

Part Number	2SB947A
Manufacturer	Panasonic Semiconductor
Description	Power Transistors
Published	Jul 7, 2011
Detailed Description	Power Transistors 2SB0947 (2SB947), 2SB0947A (2SB947A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-v...
Datasheet	2SB947A PDF File

Overview

Power Transistors 2SB0947 (2SB947), 2SB0947A (2SB947A) www.
DataSheet4U.
net Silicon PNP epitaxial planar type For low-voltage switcing Unit: mm 0.
7±0.
1 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 10.
0±0.
2 5.
5±0.
2 4.
2±0.
2 4.
2±0.
2 2.
7±0.
2 7.
5±0.
2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0947 2SB0947A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating −40 −50 −20 −40 −5 −10 −15 35 2 150 −55 to +150 °C °C V A A W V Unit V 16.
7±0.
3 φ 3.
1±0.
1 Solder Dip (4.
0) 1.
4±0.
1 1.
3±0.
2 0.
5+0.
2 –0.
1 14.
0±0.
5 0.
8±0.
1 Collector-emitter voltage 2SB0947 (Base open) 2SB0947A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 2.
54±0.
3 5.
08±0.
5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0947 2SB0947A 2SB0947 2SB0947A IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time * Symbol VCEO ICBO Conditions IC = −10 mA, IB = 0 VCB = −40 V, IE = 0 VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.
1 A VCE = −2 V, IC = −2 A IC = −7 A, IB = − 0.
23 A IC = −7 A, IB = − 0.
23 A VCE = −10 V, IC = − 0.
5 A, f = 10 MHz VCB = −10 V, IE = 0, f = 1 MHz IC = −2 A, IB1 = −66 mA, IB2 = 66 mA VCC = −20 V Min −20 −40 Typ Max Unit V −50 −50 −50 45 60 260 − 0.
6 −1.
5 150 200 0.
1 0.
5 0.
1 µA µA  V V MHz pF µs µs µs Emitter-base cutoff current (Collector open) Forward current transfer ratio VCE(sat) VBE(sat) fT Cob ton tstg tf Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 meas...

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