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2SB948A

Panasonic Semiconductor
Part Number 2SB948A
Manufacturer Panasonic Semiconductor
Description Power Transistors
Published Jul 7, 2011
Detailed Description Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-v...
Datasheet PDF File 2SB948A PDF File

2SB948A
2SB948A



Overview
Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) www.
DataSheet4U.
net Silicon PNP epitaxial planar type For low-voltage switching ■ Features 16.
7±0.
3 0.
7±0.
1 Unit: mm 10.
0±0.
2 5.
5±0.
2 4.
2±0.
2 4.
2±0.
2 2.
7±0.
2 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 7.
5±0.
2 φ 3.
1±0.
1 ■ Absolute Maximum Ratings TC = 25°C Collector-base voltage (Emitter open) 2SB0948 2SB0948A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature VCBO −40 −50 −20 −40 −5 −10 −20 40 2 150 −55 to +150 °C °C V A A W 1 2 3 V Solder Dip (4.
0) Parameter Symbol Rating Unit 14.
0±0.
5 1.
4±0.
1 1.
3±0.
2 0.
5+0.
2 –0.
1 0.
8±0.
1 Collector-emitter voltage 2SB0948 (Base open) 2SB0948A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V 2.
54±0.
3 5.
08±0.
5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) 2SB0948 2SB0948A ICBO IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT Cob ton tstg tf VCB = −40 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.
1 A VCE = −2 V, IC = −3 A IC = −10 A, IB = − 0.
33 A IC = −10 A, IB = − 0.
33 A VCE = −10 V, IC = − 0.
5 A, f = 10 MHz VCB = −10 V, IE = 0, f = 1 MHz IC = −3 A, IB1 = − 0.
1 A, IB2 = 0.
1 A VCC = −20 V 100 400 0.
1 0.
5 0.
1 45 60 260 − 0.
6 −1.
5 V V MHz pF µs µs µs Symbol VCEO Conditions IC = −10 mA, IB = 0 Min −20 −40 −50 −50 µA µA  Typ Max Unit V Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank c...



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