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2SB0950A

Part Number	2SB0950A
Manufacturer	Panasonic Semiconductor
Description	Power Transistors
Published	Jul 7, 2011
Detailed Description	Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlingto...
Datasheet	2SB0950A PDF File

Overview

Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) www.
DataSheet4U.
net Silicon PNP epitaxial planar type darlington Unit: mm 0.
7±0.
1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A ■ Features • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.
7±0.
3 10.
0±0.
2 5.
5±0.
2 4.
2±0.
2 2.
7±0.
2 7.
5±0.
2 φ 3.
1±0.
1 Parameter Collector-base voltage (Emitter open) 2SB0950 2SB0950A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −60 −80 −60 −80 −5 −4 −8 40 2 150 −55 to +150 Unit V Solder Dip (4.
0) ■ Absolute Maximum Ratings TC = 25°C 14.
0±0.
5 4.
2±0.
2 1.
4±0.
1 1.
3±0.
2 0.
5+0.
2 –0.
1 0.
8±0.
1 2.
54±0.
3 Collector-emitter voltage 2SB0950 (Base open) 2SB0950A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature V 5.
08±0.
5 V A A W B °C °C 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0950 2SB0950A 2SB0950 2SB0950A IEBO hFE1 hFE2 Collector-emitter saturation voltage * E Conditions Min −60 −80 −2.
5 −200 −200 −500 −500 −2 1 000 1 000 10 000 −2 −4 20 0.
3 2 0.
5 V V MHz µs µs µs mA  µA Typ Max Unit V Symbol 2SB0950 2SB0950A VBE ICBO ICEO VCEO IC = −30 mA, IB = 0 VCE = −3 V, IC = −3 A VCB = −60 V, IE = 0 VCB = −80 V, IE = 0 VCE = −30 V, IB = 0 VCE = −40 V, IB = 0 VEB = −5 V, IC = 0 VCE = −3 V, IC = − 0.
5 A VCE = −3 V, IC = −3 A IC = −3 A, IB = −12 mA IC = −5 A, IB = −20 mA VCE = −10 V, IC = − 0.
5 A, f = 1 MHz IC = −3 A, IB1 = −12 mA, IB2 = 12 mA VCC = −50 V V µA Emitter-base cutoff current (Collector open) Forward current transfer ratio VCE(sat)1 VCE(sat)2 fT ton tstg tf Transition frequency Turn-on...

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