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2SB0951A

Part Number	2SB0951A
Manufacturer	Panasonic Semiconductor
Description	Power Transistors
Published	Jul 7, 2011
Detailed Description	Power Transistors 2SB0951 (2SB951), 2SB0951A (2SB951A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlingto...
Datasheet	2SB0951A PDF File

Overview

Power Transistors 2SB0951 (2SB951), 2SB0951A (2SB951A) www.
DataSheet4U.
net Silicon PNP epitaxial planar type darlington 0.
7±0.
1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A ■ Features • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.
7±0.
3 Unit: mm 10.
0±0.
2 5.
5±0.
2 4.
2±0.
2 4.
2±0.
2 2.
7±0.
2 7.
5±0.
2 φ 3.
1±0.
1 Solder Dip (4.
0) 14.
0±0.
5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0951 2SB0951A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −7 −8 −12 45 2 150 −55 to +150 °C °C V A A W V Unit V 1.
4±0.
1 1.
3±0.
2 0.
5+0.
2 –0.
1 0.
8±0.
1 2.
54±0.
3 5.
08±0.
5 Collector-emitter voltage 2SB0951 (Base open) 2SB0951A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0951 2SB0951A 2SB0951 2SB0951A IEBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf ICBO VCB = −60 V, IE = 0 VCB = −80 V, IE = 0 VEB = −7 V, IC = 0 VCE = −3 V, IC = −4 A VCE = −3 V, IC = −8 A IC = −4 A, IB = −8 mA IC = −4 A, IB = −8 mA VCE = −10 V, IC = −1 A, f = 1 MHz IC = −4 A, IB1 = −8 mA, IB2 = 8 mA VCC = −50 V 20 0.
5 2.
0 1.
0 1 000 500 −1.
5 −2.
0 V V MHz µs µs µs Symbol VCEO Conditions IC = −30 mA, IB = 0 Min −60 −80 −100 −100 −2 10 000 mA  µA Typ Max Unit V Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification R...

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