DatasheetsPDF.com

2SB1182

Rohm
Part Number 2SB1182
Manufacturer Rohm
Description Medium power Transistor
Published Mar 22, 2005
Detailed Description Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A /...
Datasheet PDF File 2SB1182 PDF File

2SB1182
2SB1182

Overview
Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat).
VCE(sat) = 0.
5V (Typ.
) (IC/IB = 2A / 0.
2A) 2) Complements 2SD1758 / 2SD1862.
Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1182 6.
5±0.
2 5.
1+−00.
.
21 C0.
5 2.
3+−00.
.
21 0.
5±0.
1 2SB1240 6.
8±0.
2 2.
5±0.
2 4.
4±0.
2 1.
0 0.
9 5.
5+−00.
.
31 1.
5±0.
3 0.
9 1.
5 2.
5 9.
5±0.
5 0.
75 0.
9 0.
65±0.
1 2.
3±0.
2 2.
3±0.
2 0.
55±0.
1 1.
0±0.
2 (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 0.
65Max.
14.
5±0.
5 0.
5±0.
1 (1) (2) (3) 2.
54 2.
54 1.
05 0.
45±0.
1 ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO −40 −32 −5 Collector current −2 IC −3 Collector power 2SB1182 dissipation 2SB1240 10 PC 1 Junction temperature Tj 150 Storage temperature Tstg −55 to 150 ∗1 Single pulse, Pw=100ms ∗2 Printed circuit board, 1.
7mm thick, collector copper plating 100mm2 or larger.
Unit V V V A(DC) A (Pulse) ∗1 W (Tc=25°C) W ∗2 °C °C Electrical characteristics (Ta=25C) Parameter Symbol Min.
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current BVCBO BVCEO BVEBO ICBO −40 −32 −5 − Emitter cutoff current Collector-emitter saturation voltage IEBO VCE(sat) − − DC current transfer ratio hFE 120 Transition frequency fT − Output capacitance ∗ Measured using pulse current.
Cob − Typ.
− − − − − −0.
5 − 100 50 Max.
− − − −1 −1 −0.
8 390 − − Unit V V V μA μA V − MHz pF Conditions IC= −50μA IC= −1mA IE= −50μA VCB= −20V VEB= −4V IC/IB= −2A/ −0.
2A VCE= −3V, IC= −0.
5A VCE= −5V, IE=0.
5A, f=100MHz VCB= −10V, IE=0A, f=1MHz ∗ ∗ www.
rohm.
com ○c 2010 ROHM Co.
, Ltd.
All rights reserved.
1/3 2010.
04 - Rev.
C 2SB1182 / 2SB1240 Packaging specifications and hFE Type 2SB1182 2SB1240 Package Code hFE Basic ordering unit (pieces) QR QR hFE va...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)